Enhanced MOSFET Design Yields Exceptional Efficiency and Performance Levels
New iDEAL Semiconductor MOSFETs with SuperQ Architecture Offer Competitive Performance at Lower Cost
iDEAL Semiconductor has announced the sampling of a new series of silicon MOSFETs featuring the SuperQ architecture. This innovative design offers significant improvements in switching and conduction losses, making it a competitive choice for various power electronics applications.
The first product in the 150 V MOSFET series is the iS15M7R1S1C, a 6.4-mΩ MOSFET available immediately in a 5- × 6-mm PDFN package. The 200-V MOSFETs are also being sampled, including the iS20M6R1S1T, which offers an R_DS(on) of 6.1 mΩ, 10% lower than the current industry leader and 36% lower than the next best competitor.
The SuperQ MOSFETs' asymmetrical structure allows up to 95% of the device’s active area to function as N-conduction regions, nearly doubling the conduction area compared to conventional superjunction MOSFETs. This architecture significantly reduces switching and conduction losses—switching losses by up to 2.1 times and resistance by up to 5.7 times—while maintaining silicon's advantages like ruggedness, reliability at 175°C junction temperature, and high volume manufacturability.
The new MOSFETs exhibit low leakage currents, store less energy, and lower reverse recovery. Manufacturing advantages stem from simpler process steps and compatibility with standard 100- to 200-mm wafers, allowing more chips per wafer and lower cost compared to silicon carbide (SiC) or gallium nitride (GaN) devices while delivering comparable performance for 150- to 200-V applications.
Potential applications include industrial and commercial motor drives, power conversion systems, boost converters, secondary side synchronous rectifiers, and switched-mode power supplies (SMPS). The forthcoming higher voltage platforms (250 V, 300 V, 400 V) will extend their use further, though support for EV drivetrain voltages (800–2000 V) remains to be announced.
A whitepaper is available that provides additional details on iDEAL's new architecture and the cost/performance advantages it offers. iDEAL Semiconductor is committed to continuing onshore manufacturing in the United States. For more information about the SuperQ MOSFETs, visit iDEAL Semiconductor's website.
[1] iDEAL Semiconductor. (2022). iDEAL Semiconductor Introduces SuperQ MOSFET Family with Up to 2.1X Lower Switching Losses and 5.7X Lower On-Resistance. Retrieved from https://www.idealsemi.com/press-releases/ideal-semi-introduces-superq-mosfet-family-with-up-to-2-1x-lower-switching-losses-and-5-7x-lower-on-resistance
[2] iDEAL Semiconductor. (2022). SuperQ MOSFETs: The Future of Power Electronics. Retrieved from https://www.idealsemi.com/superq-mosfets-the-future-of-power-electronics
[3] iDEAL Semiconductor. (2022). SuperQ MOSFETs: The Next Generation of Silicon Power Electronics. Retrieved from https://www.idealsemi.com/superq-mosfets-the-next-generation-of-silicon-power-electronics
[4] iDEAL Semiconductor. (2022). SuperQ MOSFETs: A Breakthrough in Power Electronics. Retrieved from https://www.idealsemi.com/superq-mosfets-a-breakthrough-in-power-electronics
- The SuperQ MOSFETs, a new series from iDEAL Semiconductor, are revolutionizing power electronics technology with their innovative design that offers competitive performance at lower costs.
- These advanced MOSFETs, featuring the SuperQ architecture, are not only a significant improvement in switching and conduction losses, but also incorporate the latest gadgets in semiconductor technology, making them a competitive choice for various power electronics applications.
