High-Power Density and Efficiency in Space and Defense Sector Advance with Rad hard GaN Technology
Radiation-Hardened GaN Technology: A Game-Changer for Space and Defense
Prepare to delve into the latest advancements in radiation-hardened Gallium Nitride (GaN) technology, a revolutionary development set to redefine the future of space exploration, satellite communications, and missile systems. On September 17, 2025, at 2:00 PM ET, 1:00 PM CT, 11:00 AM PT, and 7:00 PM GMT, Infineon Technologies is hosting a webinar to discuss this groundbreaking technology, sponsored by the global leader in semiconductor solutions.
The webinar, accessible only for those who are already registered, will be led by Sean DArcy, Senior Marketing Director at Infineon Technologies, and Joe Dussi, Digital Marketing Manager, both of whom bring extensive experience in the Aerospace and Defense industry. Sean DArcy has an impressive career history, having worked at BAE Systems, Honeywell Defense, Northrop Grumman, Analog Devices, and Infineon Technologies. Joe Dussi, with 25 years of marketing experience in the high technology industry, has a specific emphasis on semiconductors.
The discussion will focus on the growing need for efficiency in satellite communications, missile systems, and high-power density in space exploration. Infineon's new family of radiation-hardened GaN transistors, based on their CoolGan™ technology, will be a key topic. These devices, internally manufactured and certified by the US Defense Logistics Agency (DLA) under the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794, are designed for harsh space environments. They offer features like Single Event Effect (SEE) hardening up to LET(GaN) = 70 MeV.cm²/mg and hermetically sealed ceramic packaging for ruggedness.
EPC Space’s radiation-hardened GaN power devices and evaluation platforms will also be explored. Their three-phase motor demonstration board, featuring radiation-hardened eGaN ICs, aims to simplify the evaluation and integration of GaN technology in space systems requiring radiation resilience.
The webinar will delve into radiation-hardening techniques and testing rigor, with companies like Infineon applying radiation-hardened-by-design methods to eliminate single-event gate rupture (SEGR) and single-event burnout (SEB) risks. The discussion will also cover advances in rapid recovery from radiation damage and emerging rad-hard technologies for satellite communications.
Join us for this insightful webinar to learn more about the latest industry trends surrounding rad hard GaN and its impact on the future of space technology. With a duration of 1 hour, this is an opportunity not to be missed for those interested in the intersection of semiconductors, space, and defense.
[1] Infineon Technologies. (2025). Radiation-Hardened Gallium Nitride (GaN) Transistors. [Online]. Available: https://www.infineon.com/cms/en/product/power/rf-power/radiation-hardened/radiation-hardened-gan-transistors/
[2] EPC Space. (2025). Radiation-Hardened GaN Power Devices and Evaluation Platforms. [Online]. Available: https://www.epc-space.com/products/radiation-hardened-gan-power-devices-and-evaluation-platforms/
[3] IEEE NSREC. (2025). Ultra-Fast Electrical Rapid Annealing (ERA) for Recovering MOS Transistor Degradation Caused by Total Ionizing Dose (TID). [Online]. Available: https://ieeexplore.ieee.org/document/9465855
[4] NASA. (2025). High-Energy Radiation Tests on Rad-Hard SiGe BiCMOS Technology for 28-GHz Beamforming Chips. [Online]. Available: https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20250008455.pdf
The webinar, led by experts with extensive backgrounds in the aerospace and defense industry, will delve into the latest industry trends surrounding rad-hard GaN technology and its impact on the future of space technology, including advancements in radiation-hardening techniques and testing rigor, rapid recovery from radiation damage, and emerging rad-hard technologies for satellite communications. This discussion aligns with the focus on science, as radiation-hardened GaN transistors are designed for harsh space environments, as seen in the work of Infineon Technologies and EPC Space. Furthermore, the integration of rad-hard GaN technology with space and defense technology demonstrates the exciting possibilities for future advancements in space-and-astronomy and technology.
